Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2010-01-27
2011-10-04
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S069000, C257SE21293
Reexamination Certificate
active
08030223
ABSTRACT:
A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.
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Izumi Akira
Masuda Atsushi
Matsumura Hideki
Ohtsuka Hiroyuki
Takahashi Masatoshi
Oliff & Berridg,e PLC
Shin-Etsu Chemical Co. , Ltd.
Taylor Earl
Vu David
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