Substrate processing apparatus and substrate processing method

Details Substrate processing apparatus and substrate processing method Substrate processing apparatus and substrate processing method

2008-01-30

2011-10-25

Meeks, Timothy (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

C156S345290, C156S345310, C156S345330, C118S715000, C216S058000, C216S063000, C216S074000

Reexamination Certificate

active

08043659

ABSTRACT:
A substrate processing method capable of controlling the internal pressure of a processing chamber to a high pressure and exhausting gases within the processing chamber at a high rate. The substrate processing method is for use in a substrate processing apparatus having a processing chamber, a supply unit supplying a processing gas into the processing chamber, a first pipe connected to the processing chamber at one end thereof, a turbo molecular pump disposed in the first pipe, a first shutoff valve disposed between the processing chamber and the turbo molecular pump in the first pipe, a second pipe connected to the processing chamber at one end thereof, a pressure control valve disposed in the second pipe, and a dry pump connected to the other end of the first pipe and to the other end of the second pipe. The substrate processing method comprises a pressure control step of controlling the internal pressure of the processing chamber using the pressure control valve after closing the first shutoff valve when performing a treatment on a substrate housed in the processing chamber; a first exhaust step of exhausting gases within the processing chamber through the second pipe using the dry pump by opening the pressure control valve after performing the treatment on the substrate; and a second exhaust step of exhausting gases within the processing chamber through the first pipe using the turbo molecular pump by closing the pressure control valve and opening the first shutoff valve after the first exhaust step.

REFERENCES:
patent: 5575853 (1996-11-01), Arami et al.
patent: 2002/0025682 (2002-02-01), Lin
patent: 2002/0028566 (2002-03-01), Yano
patent: 2003/0003244 (2003-01-01), Rossman
patent: 2003/0203113 (2003-10-01), Cho et al.
patent: 2004/0262254 (2004-12-01), Ozawa et al.
patent: 2005/0016956 (2005-01-01), Liu et al.
patent: 2005/0241670 (2005-11-01), Dong et al.
patent: 2005/0241671 (2005-11-01), Dong et al.
patent: 8-74737 (1996-03-01), None
patent: 9-45623 (1997-02-01), None
patent: 09-195976 (1997-07-01), None
patent: 11-222678 (1999-08-01), None
patent: 2000-100793 (2000-04-01), None
patent: 2005-39185 (2005-02-01), None
patent: 10-2006-0047528 (2006-05-01), None
JP09-195976, Takekuma, Jul. 1997, English machine translation.
JP09-195976, Takekuma, Jul. 1997, US Patent office Official translation of term indicated in machine translation as “inflation valve”.
JP2000-100793, Takayama, Apr. 2000. English machine translation (original JP version and abstract per applicant/IDS).
Office Action issued Aug. 23, 2010, in China Patent Application No. 200810008939.7 (with English-language Translation).
Chinese Office Action issued Mar. 24, 2011, in Patent Application No. 200810008939.7 (with English-language translation).

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