Magnetoresistive element and method of manufacturing the same

Details Magnetoresistive element and method of manufacturing the same Magnetoresistive element and method of manufacturing the same

2009-09-09

2011-12-20

Wilson, Allan R (Department: 2815)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C257S108000, C257S421000, C257SE29323

Reexamination Certificate

active

08081505

ABSTRACT:
A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

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Explanation of Non-English Language References in 2 pages. Signed May 13, 2009, filed Sep. 9, 2009.

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