Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2007-09-14
2011-10-25
Mitchell, James (Department: 2813)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S612000, C257S778000
Reexamination Certificate
active
08043893
ABSTRACT:
An electrical structure and method for forming electrical interconnects. The method includes positioning a sacrificial carrier substrate such that a first surface of a non-solder metallic core structure within the sacrificial carrier substrate is in contact with a first electrically conductive pad. The first surface is thermo-compression bonded to the first electrically conductive pad. The sacrificial carrier substrate is removed from the non-solder metallic core structure. A solder structure is formed on a second electrically conductive pad. The first substrate comprising the non-solder metallic core structure is positioned such that a second surface of the non-solder metallic core structure is in contact with the solder structure. The solder structure is heated to a temperature sufficient to cause the solder structure to melt and form an electrical and mechanical connection between the second surface of the non-solder metallic core structure and the second electrically conductive pad.
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Furman Bruce K.
Nah Jae-Woong
International Business Machines - Corporation
Mitchell James
Morris Daniel P.
Schmeiser Olsen & Watts
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