Trench substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – On insulating carrier other than a printed circuit board

Reexamination Certificate

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Details

C257SE23036

Reexamination Certificate

active

08072052

ABSTRACT:
Disclosed herein are a trench substrate and a method of manufacturing the same. The trench substrate includes a base substrate, an insulating layer formed on one side or both sides of the base substrate and including trenches formed in a circuit region and a dummy region positioned at a peripheral edge of the trench substrate, and a circuit layer formed in the trenches of the circuit region through a plating process and including a circuit pattern and vias. Thanks to formation of the trenches in the dummy region and the cutting region, deviation in thickness of a plating layer formed on the insulating layer in a plating process is improved upon.

REFERENCES:
patent: 2002/0192902 (2002-12-01), Kimura et al.
patent: 2002-171048 (2002-06-01), None
patent: 1020090020208 (2009-02-01), None
patent: WO-03/019641 (2003-03-01), None
Office Action from counterpart Korean Patent Application No. 10-2009-0033216, mailed Nov. 3, 2010, 3 pages.
Office Action from counterpart Japanese Patent Application No. 2009-115606, mailed Jul. 5, 2011, 4 pages.

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