Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-09-11
2011-10-04
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S166000
Reexamination Certificate
active
08030147
ABSTRACT:
To provide a method for manufacturing a thin film transistor with excellent electric characteristics and high reliability and a display device including the thin film transistor. A gate insulating film is formed over a gate electrode, crystal nuclei is formed over the gate insulating film using fluorosilane and silane, and crystal growth is generated using the crystal nuclei as nuclei to form a microcrystalline semiconductor film, so that crystallinity at an interface between the gate insulating film and the microcrystalline semiconductor film is improved. Next, a thin film transistor is manufactured using the microcrystalline semiconductor film having crystallinity improved at the interface between the gate insulating film and the microcrystalline semiconductor film as a channel formation region.
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Furuno Makoto
Jinbo Yasuhiro
Yamazaki Shunpei
Novacek Christy
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Zandra
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