Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2010-10-08
2011-11-15
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S158000, C257SE21414, C257SE51006
Reexamination Certificate
active
08058113
ABSTRACT:
A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor.
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Chabinyc Michael L.
Wong William S.
Blakely , Sokoloff, Taylor & Zafman LLP
Palo Alto Research Center Incorporated
Tran Minh-Loan T
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