Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2010-01-25

2011-11-22

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S308000, C438S623000, C438S723000, C257SE21165, C257SE21409

Reexamination Certificate

active

08062973

ABSTRACT:
A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.

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patent: 2005-019705 (2005-01-01), None

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