Semiconductor structure including self-aligned deposited...

Details Semiconductor structure including self-aligned deposited... Semiconductor structure including self-aligned deposited...

2007-11-29

2011-12-13

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S204000, C257S369000, C257SE27046, C257SE21632, C257SE27108

Reexamination Certificate

active

08076734

ABSTRACT:
A semiconductor structure, such as a field effect device structure, and more particularly a CMOS structure, includes a gate dielectric that is at least in-part aligned to an active region of a semiconductor substrate over which is located the gate dielectric. The gate dielectric comprises other than a thermal processing product of the semiconductor substrate. In particular, the gate dielectric may be formed using an area selective deposition method such as but not limited to an area selective atomic layer deposition method. Within the context of a CMOS structure, the invention provides particular advantage insofar as the use of a self-aligned method for forming a gate dielectric aligned upon an active region of a semiconductor substrate may avoid a masking process that may otherwise be needed to strip portions of an area non-selective blanket gate dielectric.

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Park et al., in “Thermally Robust Dual-Work Function ALD-MNx MOSFET Using Conventional CMOS Process Flow,” VLSI 2004.
Chen et al., in “Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification,” Applied Physics Letters, 86, 191910-1 (2005).

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