Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-01
1996-12-10
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257386, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
055833616
ABSTRACT:
A semiconductor device is provided with a semiconductor at least including a source and a drain of a conductive type with a high impurity concentration and a channel area of a second conductive type opposite to the first conductive type, positioned between the source and drain, an insulation layer covering at least the channel area, and a gate electrode of a conductive material positioned adjacent to the insulation layer. A pn junction is positioned below the insulated gate electrode. A depletion layer extending from the pn junction at least reaches the source and drain areas.
REFERENCES:
patent: 4697198 (1987-09-01), Komori et al.
patent: 4701775 (1987-10-01), Cosentino et al.
patent: 4784968 (1988-11-01), Komori et al.
patent: 4819043 (1989-04-01), Yazawa et al.
patent: 4908681 (1990-03-01), Nishida et al.
patent: 4914492 (1990-04-01), Matsumoto
Proceedings of the 8th Confernece ((1976) International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, Vol. 16 (1977) Supplement 16-1, pp. 179-183, "Grooved Gate MOSFET" by Nishimatsu et al.
Canon Kabushiki Kaisha
Loke Steven H.
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