Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-05-15

2011-12-13

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S334000, C257SE21417, C257SE21418, C257SE29257, C438S218000, C438S224000, C438S268000, C438S358000

Reexamination Certificate

active

08076725

ABSTRACT:
An impurity buried layer constructed by two buried regions formed by impurities of identical type exist, a buried region formed by an impurity having a slow diffusion speed is provided on the entire surface of a transistor formation region, and a buried region formed by an impurity having a fast diffusion speed is provided inwardly from beneath the inside end of an isolation insulating film serving as a region on which an electric field concentrates partially.

REFERENCES:
patent: 4589004 (1986-05-01), Yasuda et al.
patent: 5132235 (1992-07-01), Williams et al.
patent: 2004/0248389 (2004-12-01), Iwabuchi
patent: 2003-303964 (2003-10-01), None
patent: 2003-347546 (2003-12-01), None

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