Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-12
2011-12-27
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S724000, C257S778000, C257S787000, C257SE29257
Reexamination Certificate
active
08084816
ABSTRACT:
A semiconductor module is disclosed. One embodiment provides a first semiconductor chip having a first contact pad on a first main surface and a second contact pad on a second main surface, a first electrically conductive layer applied to the first main surface, a second electrically conductive layer applied to the second main surface, and an electrically insulating material covering the first electrically conductive layer, wherein a surface of the second electrically conductive layer forms an external contact pad and the second electrically conductive layer has a thickness of less than 200 μm.
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Hoeglauer Josef
Otremba Ralf
Schiess Klaus
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Pizarro Marcos D.
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