Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-23
2011-11-29
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S310000, C257S353000, C257SE27092
Reexamination Certificate
active
08067793
ABSTRACT:
A method for manufacturing a semiconductor device with high response speed and high reliability. In the method for manufacturing a semiconductor device of the invention, a bonding layer is formed over a substrate, an insulating film and a storage capacitor portion lower electrode are formed over the bonding layer, a single crystal silicon layer is formed over the insulating film, a storage capacitor portion insulating film is formed over the storage capacitor portion lower electrode, a wiring is formed over the storage capacitor portion insulating film, a channel forming region and a low concentration impurity region are formed over the single crystal silicon layer, and a gate insulating film and a gate electrode are formed over the single crystal silicon layer. The storage capacitor portion insulating film is formed by depositing a YSZ film with a single crystal silicon layer used as a base film, whereby the permittivity increases and thus the leakage current from the storage capacitor portion is suppressed.
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Landau Matthew C
Luke Daniel
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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