Semiconductor structure and method of manufacture

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S667000

Reexamination Certificate

active

08049261

ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a capacitor embedded in a dielectric material below the surface of a semiconductor substrate is disclosed. Other embodiments are described and claimed.

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patent: 2008/0048232 (2008-02-01), Su et al.
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patent: 60261168 (1985-12-01), None
patent: 2009/055140 (2009-04-01), None
PCT/US2008/074480, “International Search Report/Written Opinion received for PCT Application No. PCT/US2008/074480 mailed on Mar. 24, 2009”, 11 Pages.
International Report on Patentability/ Written Opinion received for PCT Application No. PCT/US2008/074480, mailed May 6, 2010, 6 pages.

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