Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-10-02
2011-11-01
Shingleton, Michael (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S667000
Reexamination Certificate
active
08049261
ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a capacitor embedded in a dielectric material below the surface of a semiconductor substrate is disclosed. Other embodiments are described and claimed.
REFERENCES:
patent: 5258321 (1993-11-01), Shimizu et al.
patent: 6613690 (2003-09-01), Chang et al.
patent: 2008/0048232 (2008-02-01), Su et al.
patent: 2008/0280435 (2008-11-01), Klootwijk et al.
patent: 60261168 (1985-12-01), None
patent: 2009/055140 (2009-04-01), None
PCT/US2008/074480, “International Search Report/Written Opinion received for PCT Application No. PCT/US2008/074480 mailed on Mar. 24, 2009”, 11 Pages.
International Report on Patentability/ Written Opinion received for PCT Application No. PCT/US2008/074480, mailed May 6, 2010, 6 pages.
Cool Kenneth J.
Cool Patent P.C.
HVVi Semiconductors, Inc.
Shingleton Michael
LandOfFree
Semiconductor structure and method of manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor structure and method of manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure and method of manufacture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4255192