Semiconductor device having first transistor rows with second tr

Details Semiconductor device having first transistor rows with second tr Semiconductor device having first transistor rows with second tr

1996-06-18

1999-03-02

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257316, 257622, H01L 27112

Patent

active

058775374

ABSTRACT:
A semiconductor device comprises: a plurality of first transistor rows each including a plurality of first transistors connected in series; and a plurality of second transistor rows provided between the first transistor rows and each including a plurality of second transistors; wherein a source/drain region of one first transistor in one first transistor row is connected to a source/drain region of another first transistor in another first transistor row through a second transistor.

REFERENCES:
patent: 4989055 (1991-01-01), Redwine
patent: 5258634 (1993-11-01), Yang
patent: 5330924 (1994-07-01), Huang et al.
patent: 5453637 (1995-09-01), Fong-Chun et al.
patent: 5572056 (1996-11-01), Hsue et al.
patent: 5721698 (1998-02-01), Lee et al.

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