Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2009-07-30

2011-12-27

Fulk, Steven J (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21625, C438S591000

Reexamination Certificate

active

08084834

ABSTRACT:
A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr.

REFERENCES:
patent: 6271573 (2001-08-01), Suguro
patent: 2004/0046217 (2004-03-01), Iwasaki et al.
patent: 2005/0205947 (2005-09-01), Yu et al.
patent: 2006/0113603 (2006-06-01), Currie
Hwang et al., “A Novel Hafnium Carbide (HfCx) Metal Gate Electrode for NMOS Device Application”, Symposium on VLSI Technology Digest of Technical Papers, pp. 156-157, (2007).
Hirano et al., “High Performance nMOSFET With HfSix/HfO2Gate Stack by Low Temperature Process”, IEDM, pp. 911-914, (2005).

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