Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2009-08-17

2011-12-13

Sandvik, Benjamin (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C257SE21682

Reexamination Certificate

active

08076710

ABSTRACT:
A method for manufacturing a semiconductor device is provided. The method includes forming multiple conductive patterns13a, forming an intermediate insulating film16on all of device isolation insulating films6and the conductive patterns13a, forming a second conductive film17on the intermediate insulating film16, patterning the second conductive film17, the intermediate insulating film16, and the multiple conductive patterns13a, individually, to make the conductive patterns13ainto floating gates13cand to make the second conductive film17into multiple strip-like control gates17a. In the method, an edge, in a plan layout, of at least one of each of the conductive patterns13aand each of the device isolation insulating films6is bent in a region between the control gates17aadjacent in a row direction.

REFERENCES:
patent: 590086 (1897-09-01), Bohrisch
patent: 5194753 (1993-03-01), Rhodes et al.
patent: 5346844 (1994-09-01), Cho et al.
patent: 5639681 (1997-06-01), Carmody et al.
patent: 5977584 (1999-11-01), Kim
patent: 5981404 (1999-11-01), Sheng et al.
patent: 6001688 (1999-12-01), Rizzuto
patent: 6110833 (2000-08-01), Early et al.
patent: 6455888 (2002-09-01), Early et al.
patent: 6610580 (2003-08-01), Chan et al.
patent: 7494868 (2009-02-01), Choi et al.
patent: 5-183127 (1993-07-01), None
patent: 5-267683 (1993-10-01), None
patent: 9-051082 (1997-02-01), None
patent: 9-172152 (1997-06-01), None
patent: 10-163456 (1998-06-01), None
International Search Report of PCT/JP2007/055666, Mailing Date of Jun. 19, 2007.

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