Silicon carbide semiconductor device and related...

Details Silicon carbide semiconductor device and related... Silicon carbide semiconductor device and related...

2008-10-30

2010-11-02

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S077000, C257S328000, C257SE29346, C257SE29169, C257SE21054, C438S270000

Reexamination Certificate

active

07825449

ABSTRACT:
An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n−-type drift layer to extend into the n−-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.

REFERENCES:
patent: 5689128 (1997-11-01), Hshieh et al.
patent: 5744826 (1998-04-01), Takeuchi et al.
patent: 6057558 (2000-05-01), Yamamoto et al.
patent: 6133587 (2000-10-01), Takeuchi et al.
patent: 2009/0146154 (2009-06-01), Zhang et al.
patent: A-H09-199724 (1997-07-01), None
patent: A-H10-308511 (1998-11-01), None
patent: A-H11-501459 (1999-02-01), None
patent: A-2001-267570 (2001-09-01), None
English Translation of JP 2001-267570.
Office Action mailed Feb. 16, 2010 from Japan Patent Office in corresponding JP Application No. 2007-288545 (and English translation).

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