Method of producing a semiconductor element

Details Method of producing a semiconductor element Method of producing a semiconductor element

2006-11-14

2010-11-02

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S162000, C438S407000, C438S527000, C438S529000, C438S530000, C438S532000

Reexamination Certificate

active

07825016

ABSTRACT:
In a method for fabricating a semiconductor element in a substrate, micro-cavities are formed in the substrate. Furthermore, doping atoms are implanted into the substrate, whereby crystal defects are produced in the substrate. The substrate is heated, so that at least some of the crystal defects are eliminated using the micro-cavities, and the semiconductor element is formed using the doping atoms.

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