Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-11-08
2010-11-09
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S535000, C438S003000, C438S712000, C257SE21134, C257SE21208, C257SE21218, C257SE21267, C257SE21278, C257SE21320, C257SE21324, C257SE21328, C257SE21347, C257SE21499, C257SE21511
Reexamination Certificate
active
07829446
ABSTRACT:
A method for dividing a wafer into a plurality of chips is provided. The method includes providing recesses in a surface of the wafer at positions along boundaries between regions to become the individual chips, providing fragile portions having a predetermined width inside the wafer at positions along the boundaries by irradiation of the other surface of the wafer with a laser beam whose condensing point is placed inside the wafer, the fragile portions including connected portions at least at one of the surfaces of the wafer, and dividing the wafer at the fragile portions into the individual chips by applying an external force to the wafer.
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U.S. Appl. No. 11/752,782, Mail Date Dec. 28, 2009, Office Action.
U.S. Appl. No. 11/752,782, Mail Date Sep. 3, 2009, Final Office Action.
U.S. Appl. No. 11/752,782, Mail Date Feb. 2, 2009, Office Action.
U.S. Appl. No. 11/752,782, Mail Date Jun. 21, 2010, Final Office Action.
Miyata Yoshinao
Takahashi Wataru
Umetsu Kazushige
Yamazaki Yutaka
Nhu David
Seiko Epson Corporation
Workman Nydegger
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