Method for manufacturing semiconductor device having via plug

Details Method for manufacturing semiconductor device having via plug Method for manufacturing semiconductor device having via plug

2008-08-15

2010-11-30

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S622000, C257SE21495

Reexamination Certificate

active

07842608

ABSTRACT:
A method for manufacturing a semiconductor device, including: forming a first conductive layer on a first insulating film; forming a second insulating film so as to cover the first conductive layer; forming a resist mask on the second insulating film; forming a hole reaching the first conductive layer in the second insulating film by a first etching using the resist mask; removing the resist mask; removing the first conductive layer exposed at the bottom of the hole by a second etching, so that the hole reaches the first insulating film and the first conductive layer exposes at a side surface within the hole; forming a conductive plug in contact with the first conductive layer exposed at the side surface within the hole by burying a conductive material in the hole; and forming a second conductive layer to be connected to the conductive plug on the second insulating film.

REFERENCES:
patent: 6316816 (2001-11-01), Matsumoto
patent: 6329241 (2001-12-01), Lin
patent: 2001/0046737 (2001-11-01), Ahn et al.
patent: 2001/0051386 (2001-12-01), De Laat et al.
patent: 2004/0106297 (2004-06-01), Kanegae et al.
patent: 2006/0097390 (2006-05-01), Nam et al.
patent: 2006/0211238 (2006-09-01), Fujimoto
patent: 2007/0077774 (2007-04-01), Yoshida
patent: 7-235541 (1995-05-01), None
patent: 10-335450 (1998-12-01), None

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