Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-04-16

2010-06-22

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000, C438S664000, C438S683000, C257SE21634

Reexamination Certificate

active

07741220

ABSTRACT:
The present invention discloses a semiconductor device and a manufacturing method thereof which improves its characteristics even though it is miniaturized. According to one aspect of the present invention, it is provided a semiconductor device comprising a first semiconductor element device including a pair of first diffusion layers formed in the semiconductor substrate with a first gate electrode therebetween, and a first conductor layer formed in the first diffusion layer and having an internal stress in a first direction, and a second semiconductor element device including a pair of second diffusion layers formed in the semiconductor substrate with a second gate electrode therebetween, and a second conductor layer formed in the second diffusion layer, having an internal stress in a second direction opposite to the first direction, and constituted of the same element as that of the first conductor layer.

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