Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-20
2010-11-16
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S679000, C438S637000, C438S597000, C257SE21006, C257SE21170, C257SE21021, C257SE21229, C257SE21242
Reexamination Certificate
active
07833899
ABSTRACT:
A multi-layer thick metallization structure for a microelectronic device includes a first barrier layer (111), a first metal layer (112) over the first barrier layer, a first passivation layer (113) over the first metal layer, a via structure (114) extending through the first passivation layer, a second barrier layer (115) over the first passivation layer and in the via structure, a second metal layer (116) over the second barrier layer, and a second passivation layer (117) over the second metal layer and the first passivation layer.
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Intel Corporation
Nelson Kenneth A.
Nhu David
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