Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-27
2010-06-15
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21626, C257SE21640, C257S900000
Reexamination Certificate
active
07737484
ABSTRACT:
A semiconductor memory device comprises a memory cell unit including at least one memory cell having a structure with a floating gate and a control gate stacked via an insulator on a semiconductor substrate. A common source line is connected to one end of the memory cell unit. A bit line is connected to the other end of the memory cell unit. The control gate has at least an upper portion with a width along the gate length formed wider than the width of the floating gate.
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U.S. Appl. No. 12/407,131, filed Mar. 19, 2009, Sakuma.
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Taylor Earl N
Vu David
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