Method for containing a silicided gate within a sidewall...

Details Method for containing a silicided gate within a sidewall... Method for containing a silicided gate within a sidewall...

2005-03-08

2010-06-15

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S596000, C257S384000, C257SE21165, C257SE29160, C257SE29161

Reexamination Certificate

active

07737019

ABSTRACT:
A method of forming an integrated circuit includes providing a semiconductor substrate and forming a gate over the semiconductor substrate. A gate sidewall spacer is formed around the gate and a resist is deposited on the gate sidewall spacer with the gate sidewall spacer and the gate exposed. A portion of the gate within the gate sidewall spacer is removed and a gate silicide is formed within the curved gate sidewall spacer. A dielectric layer is formed over the gate silicide and a contact is formed to the gate silicide.

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