Semiconductor pressure sensor, method for producing the...

Details Semiconductor pressure sensor, method for producing the... Semiconductor pressure sensor, method for producing the...

2008-12-05

2010-11-09

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S419000, C257SE27006

Reexamination Certificate

active

07829960

ABSTRACT:
A semiconductor pressure sensor includes: a first substrate; a buried insulating film laminated on the first substrate; a second substrate laminated on the buried insulating film; a plurality of electrodes including a lower electrode and at least two upper electrodes, the lower electrode being formed on the second substrate; and a piezoelectric film laminated on the lower electrode and having the upper electrodes formed thereon. In the sensor, there is removed at least a portion of a region of the first substrate corresponding to a region of the second substrate including the piezoelectric film and the electrodes.

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