Method for forming a fine pattern of a semiconductor device

Details Method for forming a fine pattern of a semiconductor device Method for forming a fine pattern of a semiconductor device

2007-06-20

2010-11-02

Chea, Thorl (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S311000, C430S322000

Reexamination Certificate

active

07824841

ABSTRACT:
A method for forming a pattern of a semiconductor device using an immersion lithography process includes pretreating a top portion of the photoresist film with an alkane solvent or alcohol in the immersion lithography process to form a uniform over-coating film.

REFERENCES:
patent: 5212043 (1993-05-01), Yamamoto et al.
patent: 5750680 (1998-05-01), Kim et al.
patent: 6051678 (2000-04-01), Kim et al.
patent: 6132926 (2000-10-01), Jung et al.
patent: 6143463 (2000-11-01), Jung et al.
patent: 6150069 (2000-11-01), Jung et al.
patent: 6180316 (2001-01-01), Kajita et al.
patent: 6225020 (2001-05-01), Jung et al.
patent: 6235447 (2001-05-01), Lee et al.
patent: 6235448 (2001-05-01), Lee et al.
patent: 6461983 (2002-10-01), Davlin et al.
patent: 7264918 (2007-09-01), Endo et al.
patent: 7303858 (2007-12-01), Jung et al.
patent: 2006/0178005 (2006-08-01), Endo et al.
patent: 2006267521 (2006-10-01), None

Affiliated with

Also associated with

Rating

Method for forming a fine pattern of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a fine pattern of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a fine pattern of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4247074