Dielectric layer, method of manufacturing the dielectric...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S785000, C257SE21282

Reexamination Certificate

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07838438

ABSTRACT:
A dielectric layer, an MIM capacitor, a method of manufacturing the dielectric layer and a method of manufacturing the MIM capacitor. The method of manufacturing the dielectric layer includes chemically reacting a metal source with different amounts of an oxidizing agent based on the cycle of the chemical reactions in order to control leakage characteristics of the dielectric layer, the electrical characteristics of the dielectric layer, and the dielectric characteristics of the dielectric layer.

REFERENCES:
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patent: 7425761 (2008-09-01), Choi et al.
patent: 2004/0033661 (2004-02-01), Yeo et al.
patent: 2005/0239297 (2005-10-01), Senzaki et al.
patent: 2004-93255 (2004-11-01), None
Korean Office Action dated May 3, 2007 issued in KR 2005-85209.

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