Nonvolatile ferroelectric memory device including trench...

Details Nonvolatile ferroelectric memory device including trench... Nonvolatile ferroelectric memory device including trench...

2006-09-22

2010-11-30

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S305000, C257SE21664, C257SE27104

Reexamination Certificate

active

07842990

ABSTRACT:
A nonvolatile ferroelectric memory device includes a plurality of unit cells. Each of the unit cells includes a cell capacitor and a cell transistor. The cell capacitor includes a storage node, a ferroelectric layer, and a plate line. The cell capacitors of more than one of the plurality of unit cells are provided in a trench.

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