Semiconductor memory device and a method of manufacturing...

Details Semiconductor memory device and a method of manufacturing... Semiconductor memory device and a method of manufacturing...

2009-06-25

2010-11-09

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C257S401000, C257S288000

Reexamination Certificate

active

07829952

ABSTRACT:
A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

REFERENCES:
patent: 5072286 (1991-12-01), Minami et al.
patent: 5132771 (1992-07-01), Yamanaka et al.
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5364810 (1994-11-01), Kosa et al.
patent: 5550396 (1996-08-01), Tsutsumi
patent: 6451665 (2002-09-01), Yunogami et al.
patent: 6483136 (2002-11-01), Yoshida et al.
patent: 6661063 (2003-12-01), Kikushima et al.
patent: 6693008 (2004-02-01), Sato et al.
patent: 6740921 (2004-05-01), Matsuoka et al.
patent: 6747324 (2004-06-01), Kikushima et al.
patent: 2002/0098639 (2002-07-01), Kisu et al.
patent: 2003/0235953 (2003-12-01), Sasago et al.
patent: 5-62474 (1993-03-01), None
patent: 5-206394 (1993-08-01), None
patent: 6-104405 (1994-04-01), None
patent: 8-88328 (1996-04-01), None
patent: WO 03019663 (2003-03-01), None
patent: WO 03036714 (2003-05-01), None
Takato, H., et al, “High Performance CMOS Surrounding Gate Transistor (SGT) for Ultra High Density LSIs”, 1988 IEEE, IEDM 88, pp. 222-225.
Chakahari H., et al—U.S. Appl. No. 10/629,733, filed Jul. 30, 2003—United States Patent Application.

Affiliated with

Also associated with

Rating

Semiconductor memory device and a method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and a method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and a method of manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4243977