Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

Filed on

2006-03-29

Date issued

2010-06-29

Examiner

Nguyen, Cuong Q (Department: 2811)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S233000, C257S231000, C257S448000, C257S435000, C257S293000, C257S294000, C257S461000, C257S440000, C257SE27133, C257SE27134, C257SE27135

Type

Reexamination Certificate

Status

active

Patent number

07745857

Description

ABSTRACT:
The object of the invention is to provide a semiconductor device that can form photodiodes that do not short circuit, without damage that causes leakage, despite formation of the opening part, and its manufacturing method. The second semiconductor layer (12, 16) of the second conductivity type is formed on the main surface of the first semiconductor layer (10, 11) of the first conductivity type. Element-separating regions (13, 14, 15, 17) formed at least on the second semiconductor layer separate the device into the regions of plural photodiodes (PD1-PD4). Conductive layer18is formed on the second semiconductor layer16in a pattern that is divided for each of the photodiodes and is connected to the second semiconductor layer16along the outer periphery with respect to all of the plural photodiodes. Insulation layer (19, 21) is formed on the entire surface to cover conductive layer18. An opening part, which reaches the second semiconductor layer16, is formed in the insulation layer (19, 21) in the region inside the pattern of conductive layer18.

REFERENCES:
patent: 5844290 (1998-12-01), Furumiya
patent: 2005/0051860 (2005-03-01), Takeuchi et al.
patent: 2005/0101073 (2005-05-01), Bae et al.

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