Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2000-03-01
2010-10-26
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000, C257SE29151
Reexamination Certificate
active
07821065
ABSTRACT:
An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.
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Hirakata Yoshiharu
Koyama Jun
Murakami Satoshi
Osame Mitsuaki
Tanaka Yukio
Husch Blackwell Sanders LLP
Lee Eugene
Semiconductor Energy Laboratory Co,. Ltd.
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