Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-14
2010-11-23
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257SE29309, C257SE21180, C438S287000, C438S288000
Reexamination Certificate
active
07838923
ABSTRACT:
A charge trapping memory cell is described, having pocket implants along the sides of the channel and having the same conductivity type as the channel, and which implants have a concentration of dopants higher than in the central region of the channel. This effectively disables the channel in the region of non-uniform charge trapping caused by a bird's beak or other anomaly in the charge trapping structure on the side of the channel. The pocket implant can be formed using a process compatible with standard shallow trench isolation processes.
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Haynes Beffel & Wolfeld LLP
Ho Tu-Tu V
Macronix International Co. Ltd.
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