Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-27
2010-11-02
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S325000, C257S326000, C257S390000, C257S391000, C257S392000, C257S393000, C257S335000, C257S336000, C257S344000, C257S351000, C257SE21703, C257SE27098, C257SE27099, C257SE27112, C438S369000, C438S370000, C438S371000, C438S372000, C438S373000
Reexamination Certificate
active
07825457
ABSTRACT:
There is provided a semiconductor device including a semiconductor substrate (10), a high concentration diffusion region (22) formed within the semiconductor substrate (10), a first low concentration diffusion region (24) that has a lower impurity concentration than the high concentration diffusion region (22) and is provided under the high concentration diffusion region (22), and a bit line (30) that includes the high concentration diffusion region (22) and the first low concentration diffusion region (24) and serves as a source region and a drain region, and a manufacturing method therefor. Reduction of source-drain breakdown voltage of the transistor is suppressed, and a low-resistance bit line can be formed. Thus, a semiconductor device that can miniaturize memory cells and a manufacturing method therefor can be provided.
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Gurley Lynne A
Li Meiya
Spansion LLC
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