Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-25
2010-06-22
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S527000, C257SE21636, C257SE21637
Reexamination Certificate
active
07741217
ABSTRACT:
A CMOS diode and method of making it are disclosed. In one embodiment, the diode comprises a silicon substrate having an N doped region and a P doped region. A first silicide region is formed on the N doped region of the silicon substrate, and a second silicide region formed on the P doped region of the silicon substrate. The first silicide region is comprised of a material having a bandgap value lower than the bandgap value of the material comprising the second silicide region. The result is a diode where the workfunction of each region of silicide more closely matches the workfunction of the doped silicon it contacts, resulting in reduced contact resistance. This provides for a diode with improved performance characteristics.
REFERENCES:
patent: 6506676 (2003-01-01), Park et al.
patent: 6642132 (2003-11-01), Cho et al.
patent: 6768179 (2004-07-01), Cho et al.
patent: 6909137 (2005-06-01), Divakaruni et al.
patent: 7157359 (2007-01-01), Park et al.
patent: 2002/0086504 (2002-07-01), Park et al.
patent: 2002/0123189 (2002-09-01), Cha et al.
patent: 2004/0262651 (2004-12-01), Mouli
patent: 2006/0163631 (2006-07-01), Chen et al.
patent: 2006/0228848 (2006-10-01), Chan et al.
patent: 2006/0244075 (2006-11-01), Chen et al.
patent: 2007/0020865 (2007-01-01), Chen et al.
patent: 2007/0040225 (2007-02-01), Yang
patent: 2007/0051996 (2007-03-01), Chen et al.
patent: 2008/0128767 (2008-06-01), Adkisson et al.
Chen Xiangdong
Yang Haining S.
Abate Joseph P.
Cohn Howard M.
International Business Machines - Corporation
Taylor Earl N
Vu David
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