Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-01-17

2010-12-07

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29126, C438S370000

Reexamination Certificate

active

07847352

ABSTRACT:
A semiconductor device includes: a semiconductor layer formed on a semiconductor substrate by performing epitaxial growth; a first buried insulating layer which is buried in the first region under the semiconductor layer; and a second buried insulating layer which is buried in the second region under the semiconductor layer in the position lower than the first buried insulating layer.

REFERENCES:
patent: 6664146 (2003-12-01), Yu
patent: 2003/0075758 (2003-04-01), Sundaresan et al.
patent: 2003/0183883 (2003-10-01), Shimizu et al.
patent: A-05-129536 (1993-06-01), None
patent: A-06-163677 (1994-06-01), None
patent: A 2000-124092 (2000-04-01), None
patent: A 2002-299591 (2002-10-01), None
T, Sakai et al., “Separation by Bonding Si Islands (SBSI) for LSI Applications,” Second International SiGe Technology and Device Meeting, Meeting Abstract, pp. 230-231, May 2004.

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