Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-06-18
2010-06-22
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21001, C257SE21193
Reexamination Certificate
active
07741677
ABSTRACT:
After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).
REFERENCES:
patent: 4477310 (1984-10-01), Park et al.
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 5162884 (1992-11-01), Liou et al.
patent: 5241208 (1993-08-01), Taguchi
patent: 5723355 (1998-03-01), Chang et al.
patent: 6043128 (2000-03-01), Kamiya
patent: 6262455 (2001-07-01), Lutze et al.
patent: 6376316 (2002-04-01), Shukuri et al.
patent: 6489648 (2002-12-01), Iwasaki et al.
patent: 6559012 (2003-05-01), Shukuri et al.
patent: 6602751 (2003-08-01), Oohashi
patent: 6727146 (2004-04-01), Murakami et al.
patent: 6734114 (2004-05-01), Hinoue et al.
patent: 6737341 (2004-05-01), Yamamoto et al.
patent: 6759706 (2004-07-01), Kobayashi
patent: 6784508 (2004-08-01), Tsunashima et al.
patent: 6787451 (2004-09-01), Shimamoto et al.
patent: 2001/0016388 (2001-08-01), Koyama et al.
patent: 2003/0003639 (2003-01-01), Kanda et al.
patent: 4-122063 (1992-04-01), None
patent: 6-222387 (1994-08-01), None
patent: 8-250742 (1996-09-01), None
patent: 11-204654 (1999-07-01), None
patent: 2001-15612 (2001-01-01), None
patent: 2001-284463 (2001-10-01), None
patent: 2001-298085 (2001-10-01), None
Hiraiwa Atsushi
Sakai Satoshi
Yamamoto Satoshi
Blum David S
Miles & Stockbridge P.C.
Renesas Technology Corp.
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