Memory cell comprising nickel-cobalt oxide switching element

Details Memory cell comprising nickel-cobalt oxide switching element Memory cell comprising nickel-cobalt oxide switching element

2006-05-24

2010-11-16

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C365S163000

Reexamination Certificate

active

07834338

ABSTRACT:
Oxides of both nickel and cobalt have lower resistivity than either nickel oxide or cobalt oxide. Nickel oxide and cobalt oxide can be reversibly switched between two or more stable resistivity states by application of suitable electrical pulses. It is expected that oxides including both nickel and cobalt, or (NixCoy)O, will switch between resistivity states at lower voltage and/or current than will nickel oxide or cobalt oxide. A layer of (NixCoy)O can be paired with a diode or transistor to form a nonvolatile memory cell.

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