MEMS pressure sensor using area-change capacitive technique

Details MEMS pressure sensor using area-change capacitive technique MEMS pressure sensor using area-change capacitive technique

2008-02-21

2010-06-15

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S419000, C257SE29324

Reexamination Certificate

active

07737514

ABSTRACT:
A micro-electro-mechanical system (MEMS) pressure sensor includes a silicon spacer defining an opening, a silicon membrane layer mounted above the spacer, and a silicon sensor layer mounted above the silicon membrane layer. The silicon membrane layer forms a diaphragm opposite of the spacer opening, and a stationary perimeter around the diaphragm and opposite the spacer. The silicon sensor layer includes a movable electrode and a stationary electrode separated by a substantially constant gap and respectively located above the diaphragm and the stationary perimeter of the silicon membrane layer. The movable electrode and the diaphragm move in response to a pressure applied to the diaphragm where an overlap area between sidewall surfaces of the movable and the stationary electrodes create a capacitance proportion to the pressure.

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Surface Micromachined Capacitive Differential Pressure Sensor with Lithographically-Defined Silicon Diaphragm. Mastragnelo et al. Solid-state Sensors and Actuators 1995 and Eurosensors IX Jun. 1995. vol. 1 pp. 612-615.

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