Methods of making semiconductor fuses

Details Methods of making semiconductor fuses Methods of making semiconductor fuses

2006-08-03

2010-10-19

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S333000

Reexamination Certificate

active

07816246

ABSTRACT:
Fuses for integrated circuits and semiconductor devices and methods for using the same. The semiconductor fuse contains two conductive layers, an overlying and underlying refractory metal nitride layer, on an insulating substrate. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure including the same materials. The fuse, which may be used to program redundant circuitry, may be blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.

REFERENCES:
patent: 4491860 (1985-01-01), Lim
patent: 6486528 (2002-11-01), Pedersen et al.
patent: 2002/0127781 (2002-09-01), Gonzalez et al.
Fukuda, Yukio, et al.,A New Fusible-Type Programmable Element Composed of Aluminum and Polysilicon. IEEE Transactions on Electron Devices, vol. ED-33, No. 2, Feb. 1986.

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