Step gate electrode structures for field-effect transistors...

Details Step gate electrode structures for field-effect transistors... Step gate electrode structures for field-effect transistors...

2004-05-21

2010-12-14

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21635

Reexamination Certificate

active

07851868

ABSTRACT:
A method is disclosed for forming at least two semiconductor devices with different gate electrode thicknesses. After forming a gate dielectric region, and determining whether a first or second device formed on the gate dielectric region expects a relatively faster gate dopant diffusion rate, a gate electrode layer is formed on the gate dielectric region wherein the gate electrode layer has a step-structure in which a portion thereof for the first device has a relatively larger thickness than that for the second device if the first device has a relatively faster gate dopant diffusion rate.

REFERENCES:
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patent: 5183773 (1993-02-01), Miyata
patent: 5278085 (1994-01-01), Maddox et al.
patent: 5851889 (1998-12-01), Michael et al.
patent: 6049113 (2000-04-01), Shida
patent: 6166413 (2000-12-01), Ono
patent: 6555437 (2003-04-01), Yu

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