MIM capacitor and metal gate transistor

Details MIM capacitor and metal gate transistor MIM capacitor and metal gate transistor

2007-01-22

2010-12-14

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S351000, C257SE21008, C257SE31001, C361S271000

Reexamination Certificate

active

07851861

ABSTRACT:
A device includes an embedded MIM capacitor and a transistor formed in parallel with reduced processing steps and improved device performance in different regions of a substrate. The embedded MIM capacitor has a bottom electrode, an insulator layer, a dielectric film, and a top electrode. The substrate has an insulator region. The bottom electrode, having a first conductor, overlies the insulator region. The insulator layer overlies the substrate and the bottom electrode. The insulator layer has an opening connecting parts of the bottom electrode. The dielectric film lines the opening, and is disposed directly on the bottom electrode and sidewalls of the opening. The top electrode, having a second conductor, overlies the dielectric film in the opening. The dielectric film lines sidewalls and bottom of the top electrode.

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