Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

2007-12-21

2010-11-09

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257S067000, C257SE29129, C257SE27100, C257S350000

Reexamination Certificate

active

07829948

ABSTRACT:
A nonvolatile semiconductor memory according to an aspect of the invention comprises a semiconductor substrate which has an SOI region and an epitaxial region at its surface, a buried oxide film arranged on the semiconductor substrate in the SOI region, an SOI layer arranged on the buried oxide film, a plurality of memory cells arranged on the SOI layer, an epitaxial layer arranged in the epitaxial region, and a select gate transistor arranged on the epitaxial layer, wherein the SOI layer is made of a microcrystalline layer.

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