Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2006-11-14
2010-10-05
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257SE33003, C438S142000
Reexamination Certificate
active
07808082
ABSTRACT:
The present invention provides structures and methods for providing facets with different crystallographic orientations than what a semiconductor substrate normally provides. By masking a portion of a semiconductor surface and exposing the rest to an anisotripic etch process that preferentially etches a set of crystallographic planes faster than others, new facets with different surface orientations than the substrate orientation are formed on the semiconductor substrate. Alternatively, selective epitaxy may be utilized to generate new facets. The facets thus formed are joined to form a lambda shaped profile in a cross-section. The electrical properties of the new facets, specifically, the enhanced carrier mobility, are utilized to enhance the performance of transistors. In a transistor with a channel on the facets that are joined to form a lambda shaped profile, the current flows in the direction of the ridge joining the facets avoiding any inflection in the direction of the current.
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Dyer Thomas W.
Hon Wong Keith Kwong
Yang Chih-Chao
Yang Haining
Gordon Matthew
International Business Machines - Corporation
Le Thao X
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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