Semiconductor device having a cylindrical capacitor

Details Semiconductor device having a cylindrical capacitor Semiconductor device having a cylindrical capacitor

2006-05-11

2010-02-02

Sarkar, Asok K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S396000, C257SE29346

Reexamination Certificate

active

07655969

ABSTRACT:
A DRAM device has a stacked capacitor including a first capacitor section received in a thick insulation film and a second capacitor section overlying the first capacitor section. A portion of the bottom electrode in the second capacitor section has a thickness larger than the thickness of another portion of the bottom electrode in the first capacitor section.

REFERENCES:
patent: 6555429 (2003-04-01), Matsui et al.
patent: 2000-33226 (2000-11-01), None
patent: 2002-110674 (2002-04-01), None

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