Substrate isolated integrated high voltage diode integrated...

Details Substrate isolated integrated high voltage diode integrated... Substrate isolated integrated high voltage diode integrated...

2006-12-12

2010-02-09

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S506000, C438S514000

Reexamination Certificate

active

07659584

ABSTRACT:
An asymmetric semiconductor device (3) that includes an integrated high voltage diode (72), including: a substrate comprising an epitaxial layer (47) and a deep well implant (42) of a first type patterned above the epitaxial layer; a shallow trench isolation (STI) region (46) separating a cathode from an anode; a first well implant (40) of a second type residing below the anode; and a deep implant mask (34) of the second type patterned above the deep well implant and below both the cathode and a portion of the STI region.

REFERENCES:
patent: 5614421 (1997-03-01), Yang
patent: 6967380 (2005-11-01), Breitwisch et al.
patent: 7012309 (2006-03-01), Germana
patent: 2005/0245020 (2005-11-01), Zhu et al.
patent: 2008/0303092 (2008-12-01), Letavic
patent: 2008/0308874 (2008-12-01), Letavic et al.

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