Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-04-21
2010-02-23
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185280
Reexamination Certificate
active
07668014
ABSTRACT:
A non-volatile memory device, related memory system, and program method for the non-volatile memory device are disclosed. In the method, memory cells in a memory cell array are accessed through a plurality of word lines by applying a program voltage to a selected word line, wherein the selected word line is not adjacent to an outmost word line, applying a first reduced pass voltage to word lines adjacent to the selected word line, and applying a second reduced pass voltage to the outermost word lines.
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Auduong Gene N.
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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