Pattern formation method

Details Pattern formation method Pattern formation method

2007-03-16

2010-02-02

Duda, Kathleen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S322000, C430S961000

Reexamination Certificate

active

07655385

ABSTRACT:
After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.

REFERENCES:
patent: 3895147 (1975-07-01), Ahn et al.
patent: 5312516 (1994-05-01), Douglas et al.
patent: 5731364 (1998-03-01), Sinta et al.
patent: 5741628 (1998-04-01), Matsuo et al.
patent: 5846692 (1998-12-01), Katsuyama et al.
patent: 5880169 (1999-03-01), Osawa et al.
patent: 6120974 (2000-09-01), Matsuo et al.
patent: 6340635 (2002-01-01), Toyota et al.
patent: 6387598 (2002-05-01), Matsuo et al.
patent: 6429142 (2002-08-01), Peng et al.
patent: 2003/0143490 (2003-07-01), Kozawa et al.
patent: 2003/0228740 (2003-12-01), Nagai et al.
patent: 2005/0009365 (2005-01-01), Sugeta et al.
patent: 3-192361 (1991-08-01), None
patent: 9-222724 (1997-08-01), None
patent: 9-323970 (1997-12-01), None
patent: 10-120628 (1998-05-01), None
patent: 10-303114 (1998-11-01), None
Japanese Office Action, with English translation, issued in Japanese Patent Application No. JP 2003-177884, mailed Oct. 30, 2007.
Switkes, M., et al., “Resolution Enhancement of 157 nm Lithography by Liquid Immersion”, Proceedings of SPIE, Mar. 5, 2002, vol. 4691, pp. 459-465, SPIE, United States.
Switkes, M, et al. “Immersion Lithography at 157 nm.” , J. Vac. Sci. Technol., B19(6), Nov./Dec. 2001, pp. 2353-2356.

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