Dielectric substrate with reflecting films

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE31127

Reexamination Certificate

active

07745880

ABSTRACT:
A semiconductor device has a transparent dielectric substrate such as a sapphire substrate. To enable fabrication equipment to detect the presence of the substrate optically, the back surface of the substrate is coated with a triple-layer light-reflecting film, preferably a film in which a silicon oxide or silicon nitride layer is sandwiched between polycrystalline silicon layers. This structure provides high reflectance with a combined film thickness of less than half a micrometer.

REFERENCES:
patent: 4093957 (1978-06-01), King et al.
patent: 4297719 (1981-10-01), Hsu
patent: 5877094 (1999-03-01), Egley et al.
patent: 6861281 (2005-03-01), Uemura et al.
patent: 2002/0081773 (2002-06-01), Inoue et al.
patent: 2004/0108511 (2004-06-01), Baik et al.
patent: 2005/0205884 (2005-09-01), Kim et al.
patent: 07-283383 (1995-10-01), None
patent: 11-220114 (1999-08-01), None

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