Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-11
2010-11-16
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29181, C438S133000
Reexamination Certificate
active
07834400
ABSTRACT:
A semiconductor structure for protecting an internal integrated circuit comprises a substrate; a plurality of first doping regions formed in the substrate and disposed substantially within an N-well; a plurality of second doping regions, formed in the substrate and disposed within an P-well; a N+ section, formed in the substrate and enclosing the N-well and the P-well; a pad, formed above the substrate and electrically connected to at least one of the first doping regions; and a first ground and a second ground respectively disposed to positions corresponding to outside and inside of the N+ section. Also, the second doping regions are isolated from the first doping regions. The first and second doping regions located within the N+ section are isolated from the substrate by the N+ section. Furthermore, the second ground is electrically connected to at least one of the second doping regions.
REFERENCES:
patent: 4626882 (1986-12-01), Cottrell et al.
patent: 5519243 (1996-05-01), Kikuda et al.
patent: 6268992 (2001-07-01), Lee et al.
patent: 2004/0164356 (2004-08-01), Josef Mergens et al.
Bacon & Thomas PLLC
Gordon Matthew
Le Thao X
System General Corp.
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